Gregusová D, Martaus J, Fedor J, Kúdela R, Kostic I, Cambel V
Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 84104 Bratislava, Slovak Republic.
Ultramicroscopy. 2009 Jul;109(8):1080-4. doi: 10.1016/j.ultramic.2009.03.018. Epub 2009 Mar 19.
We developed a technology of sub-micrometer Hall probes for future application in scanning hall probe microscopy (SHPM) and magnetic force microscopy (MFM). First, the Hall probes of approximately 9-mum dimensions are prepared on the top of high-aspect-ratio GaAs pyramids with an InGaP/AlGaAs/GaAs active layer using wet-chemical etching and non-planar lithography. Then we show that the active area of planar Hall probes can be downsized to sub-micrometer dimensions by local anodic oxidation technique using an atomic force microscope. Such planar probes are tested and their noise and magnetic field sensitivity are evaluated. Finally, the two technologies are combined to fabricate sub-micrometer Hall probes on the top of high-aspect ratio mesa for future SHPM and MFM techniques.
我们开发了一种亚微米级霍尔探针技术，用于未来在扫描霍尔探针显微镜（SHPM）和磁力显微镜（MFM）中的应用。首先，使用湿化学蚀刻和非平面光刻技术，在具有InGaP/AlGaAs/GaAs有源层的高纵横比GaAs金字塔顶部制备尺寸约为9微米的霍尔探针。然后我们表明，通过使用原子力显微镜的局部阳极氧化技术，可以将平面霍尔探针的有源区域缩小到亚微米尺寸。对这种平面探针进行了测试，并评估了它们的噪声和磁场灵敏度。最后，将这两种技术结合起来，在高纵横比台面顶部制造亚微米级霍尔探针，用于未来的SHPM和MFM技术。
