Bellini E, Taurino A, Catalano M, Lomascolo M, Passaseo A, Vasanelli L
Dipartimento Ingegneria Innovazione, Università del Salento, Lecce, Italy.
Nanotechnology. 2009 Jun 24;20(25):255306. doi: 10.1088/0957-4484/20/25/255306. Epub 2009 Jun 2.
In this work, the effects of the focus ion beam (FIB) milling process on the optical properties of semiconductor nanostructures were investigated. With this aim, a sensitive materials system based on InGaAs/GaAs quantum dots with well known and excellent optical properties was selected for the FIB treatment. The FIB technique was used to locally remove a metallic mask deposited on top of the quantum dot sample. The photoluminescence (PL) signal, collected from the circular openings, was used to infer the possible damage effects of the ion beam on the properties of the dots.
在这项工作中，研究了聚焦离子束（FIB）铣削工艺对半导体纳米结构光学性质的影响。为此，选择了一种基于具有众所周知且优异光学性质的InGaAs/GaAs量子点的敏感材料系统进行FIB处理。FIB技术用于局部去除沉积在量子点样品顶部的金属掩膜。从圆形开口收集的光致发光（PL）信号用于推断离子束对量子点性质可能产生的损伤效应。
