Anorganische und Allgemeine Chemie FR 8.1, Naturwissenschaftlich-Technische Fakultät III Chemie, Pharmazie und Werkstoffwissenschaften, Universität des Saarlandes C4.1, 66041 Saarbrücken, Germany.
Small. 2009 Oct;5(20):2291-6. doi: 10.1002/smll.200900158.
The selective formation of large-scale graphene layers on a Rh-YSZ-Si(111) multilayer substrate by a surface-induced chemical growth mechanism is investigated using low-energy electron diffraction, X-ray photoelectron spectroscopy, X-ray photoelectron diffraction, and scanning tunneling microscopy. It is shown that well-ordered graphene layers can be grown using simple and controllable procedures. In addition, temperature-dependent experiments provide insight into the details of the growth mechanisms. A comparison of different precursors shows that a mobile dicarbon species (e.g., C(2)H(2) or C(2)) acts as a common intermediate for graphene formation. These new approaches offer scalable methods for the large-scale production of high-quality graphene layers on silicon-based multilayer substrates.
采用低能电子衍射、X 射线光电子能谱、X 射线光电子衍射和扫描隧道显微镜研究了 Rh-YSZ-Si(111) 多层基底上通过表面诱导化学生长机制选择性形成大尺寸石墨烯层的过程。结果表明，可以采用简单且可控的方法生长出具有良好有序性的石墨烯层。此外，温度相关实验提供了有关生长机制细节的信息。不同前体的对比表明，一种移动的二碳物种（如 C(2)H(2)或 C(2)）充当了石墨烯形成的常见中间体。这些新方法为在基于硅的多层基底上大规模生产高质量石墨烯层提供了可扩展的方法。
