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微波等离子体增强化学气相沉积法生长少层石墨烯的初始阶段。

Initial stages of few-layer graphene growth by microwave plasma-enhanced chemical vapour deposition.

机构信息

VITO Materials, Flemish Institute for Technological Research, Mol, Belgium.

出版信息

Nanotechnology. 2010 Mar 5;21(9):095602. doi: 10.1088/0957-4484/21/9/095602. Epub 2010 Jan 29.

DOI:10.1088/0957-4484/21/9/095602
PMID:20110582
Abstract

A promising method for the production of few-layer graphene (FLG) is microwave plasma-enhanced chemical vapour deposition (MW PECVD). However, the growth mechanism of PECVD-synthesized FLG is not completely understood. The aim of this work was to investigate the initial stages of the growth process of FLG deposited by MW PECVD on several substrates (quartz, silicon, platinum). The deposited thin films were characterized by angle-resolved x-ray photoelectron spectroscopy (ARXPS), electron backscattered diffraction (EBSD), scanning electron microscopy (SEM) and x-ray diffraction (XRD). It was found that the initial stages of the deposition were different for the three chosen substrate materials. However, the fully grown FLG layers were similar for all substrates.

摘要

一种有前景的生产少层石墨烯(FLG)的方法是微波等离子体增强化学气相沉积(MW PECVD)。然而,PECVD 合成 FLG 的生长机制尚未完全理解。本工作旨在研究 MW PECVD 在几种基底(石英、硅、铂)上沉积 FLG 的生长过程的初始阶段。沉积的薄膜通过角分辨 X 射线光电子能谱(ARXPS)、电子背散射衍射(EBSD)、扫描电子显微镜(SEM)和 X 射线衍射(XRD)进行了表征。结果发现,三种选择的基底材料的沉积初始阶段不同。然而,对于所有基底,完全生长的 FLG 层是相似的。

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