Gokirmak Ali, Inaltekin Hazer, Tiwari Sandip
Department of Electrical and Computer Engineering, University of Connecticut, Storrs, CT 06269, USA.
Nanotechnology. 2009 Aug 19;20(33):335203. doi: 10.1088/0957-4484/20/33/335203. Epub 2009 Jul 28.
A high resolution capacitance-voltage (C-V) characterization technique, enabling direct measurement of electronic properties at the nanoscale in devices such as nanowire field effect transistors (FETs) through the use of random fluctuations, is described. The minimum noise level required for achieving sub-aF (10(-18) F) resolution, the leveraging of stochastic resonance, and the effect of higher levels of noise are illustrated through simulations. The non-linear DeltaC(gate-source/drain)-V(gate) response of FETs is utilized to determine the inversion layer capacitance (C(inv)) and carrier mobility. The technique is demonstrated by extracting the carrier concentration and effective electron mobility in a nanoscale Si FET with C(inv) = 60 aF.
描述了一种高分辨率电容 - 电压（C - V）表征技术，该技术通过利用随机涨落，能够在诸如纳米线场效应晶体管（FET）等器件的纳米尺度上直接测量电子特性。通过模拟说明了实现亚飞法（10^(-18) F）分辨率所需的最小噪声水平、随机共振的利用以及更高噪声水平的影响。利用FET的非线性ΔC（栅源/漏）-V（栅）响应来确定反型层电容（C(inv)）和载流子迁移率。通过提取C(inv) = 60 aF的纳米级硅FET中的载流子浓度和有效电子迁移率，证明了该技术。
