National Research Centre S3, CNR-INFM Via Campi 213/A, 41100 Modena, Italy.
Ultramicroscopy. 2009 Nov;109(12):1453-64. doi: 10.1016/j.ultramic.2009.07.010. Epub 2009 Jul 24.
In this work the effects of strain on high-angle annular dark field (HAADF) images taken in zone axis conditions have been quantitatively studied. In particular, the presence of dark contrast zones in experimental HAADF images of InGaAs-GaAs interfaces is here interpreted in terms of strain relaxation at the surface. The consistence of this assumption is demonstrated by means of experiments and simulations performed for different In compositions, specimen tilt and thickness conditions. It is shown how the HAADF contrast mechanism is related to the bending of the lattice planes in the first surface region. Finally, a generalization of the 1s approximation that is able to qualitatively describe the effect of strain on HAADF images is presented.
在这项工作中，定量研究了在晶带轴条件下采集的高角度环形暗场（HAADF）图像中应变的影响。特别是，本文根据表面应变弛豫，解释了 InGaAs-GaAs 界面的实验 HAADF 图像中暗对比区的存在。通过对不同铟成分、试样倾斜和厚度条件进行的实验和模拟，证明了这一假设的一致性。结果表明，HAADF 对比机制与第一表面区域中晶格平面的弯曲有关。最后，提出了一个能够定性描述应变对 HAADF 图像影响的 1s 近似的推广。
