Klee Mareike, van Esch Harry, Keur Wilco, Kumar Biju, van Leuken-Peters Linda, Liu Jin, Mauczok Rüdiger, Neumann Kai, Reimann Klaus, Renders Christel, Roest Aarnoud L, Tiggelman Mark P J, de Wild Marco, Wunnicke Olaf, Zhao Jing
Philips Research, Eindhoven, The Netherlands.
IEEE Trans Ultrason Ferroelectr Freq Control. 2009 Aug;56(8):1505-12. doi: 10.1109/TUFFC.2009.1213.
Thin-film ferroelectric capacitors have been integrated with resistors and active functions such as ESD protection into small, miniaturized modules, which enable a board space saving of up to 80%. With the optimum materials and processes, integrated capacitors with capacitance densities of up to 100 nF/mm2 for stacked capacitors combined with breakdown voltages of 90 V have been achieved. The integration of these high-density capacitors with extremely high breakdown voltage is a major accomplishment in the world of passive components and has not yet been reported for any other passive integration technology. Furthermore, thin-film tunable capacitors based on barium strontium titanate with high tuning range and high quality factor at 1 GHz have been demonstrated. Finally, piezoelectric thin films for piezoelectric switches with high switching speed have been realized.
薄膜铁电电容器已与电阻器以及诸如静电放电保护等有源功能集成到小型、微型化模块中，这可节省高达80%的电路板空间。通过优化的材料和工艺，已实现了堆叠电容器的电容密度高达100 nF/mm²且击穿电压为90 V的集成电容器。这些具有极高击穿电压的高密度电容器的集成是无源元件领域的一项重大成就，尚未见其他任何无源集成技术有相关报道。此外，还展示了基于钛酸锶钡且在1 GHz频率下具有高调谐范围和高品质因数的薄膜可调电容器。最后，实现了用于具有高开关速度的压电开关的压电薄膜。
