Toishi Mitsuru, Englund Dirk, Faraon Andrei, Vucković Jelena
Ginzton laboratory, Stanford University, Stanford, CA 94305, USA.
Opt Express. 2009 Aug 17;17(17):14618-26. doi: 10.1364/oe.17.014618.
We analyze a single photon source consisting of an InAs quantum dot coupled to a directional-emission photonic crystal (PC) cavity implemented in GaAs. On resonance, the dot's lifetime is reduced by more than 10 times, to 45 ps. Compared to the standard three-hole defect cavity, the perturbed PC cavity design improves the collection efficiency into an objective lens (NA = 0.75) by factor 4.5, and improves the coupling efficiency of the collected light into a single mode fiber by factor 1.9. The emission frequency is determined by the cavity mode, which is antibunched to g((2))(0) = 0.05. The cavity design also enables efficient coupling to a higher-order cavity mode for local optical excitation of cavity-coupled quantum dots.
我们分析了一个单光子源，它由一个与在砷化镓中实现的定向发射光子晶体（PC）腔耦合的砷化铟量子点组成。在共振时，量子点的寿命缩短了10倍以上，降至45皮秒。与标准的三孔缺陷腔相比，经过扰动的光子晶体腔设计将进入物镜（数值孔径 = 0.75）的收集效率提高了4.5倍，并将收集到的光耦合到单模光纤中的耦合效率提高了1.9倍。发射频率由腔模决定，其反聚束程度为g((2))(0) = 0.05。这种腔设计还能够有效地耦合到高阶腔模，用于对与腔耦合的量子点进行局部光激发。
