砷化镓透射电镜样品的化学抛光方法。

Chemical polishing method of GaAs specimens for transmission electron microscopy.

机构信息

Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan.

出版信息

Micron. 2010 Jan;41(1):20-5. doi: 10.1016/j.micron.2009.07.011. Epub 2009 Jul 28.

DOI:10.1016/j.micron.2009.07.011

PMID:19726201

Abstract

A practical method for transmission electron microscopy specimen preparation of GaAs-based materials with quantum dot structures is presented to show that high-quality image observations in high-resolution transmission electron microscopy (HRTEM) can be effectively obtained. Specimens were prepared in plan-view and cross-section using ion milling, followed by two-steps chemical fine polishing with an ammonia solution (NH(4)OH) and a dilute H(2)SO(4) solution. Measurements of electron energy loss spectroscopy (EELS) and atomic force microscopy (AFM) proved that clean and flat specimens can be obtained without chemical residues. HRTEM images show that the amorphous regions of carbon and GaAs can be significantly reduced to enhance the contrast of lattice images of GaAs-based quantum structure.

摘要

提出了一种用于具有量子点结构的 GaAs 基材料的透射电子显微镜样品制备的实用方法，以表明可以有效地获得高分辨率透射电子显微镜（HRTEM）中的高质量图像观察。使用离子铣削在平面视图和横截面中制备样品，然后使用氨溶液（NH（4）OH）和稀 H（2）SO（4）溶液进行两步化学精细抛光。电子能量损失光谱（EELS）和原子力显微镜（AFM）的测量证明可以获得没有化学残留物的清洁和平坦的样品。HRTEM 图像表明，可以显著减少碳和 GaAs 的非晶区，以增强 GaAs 基量子结构的晶格图像的对比度。