Nguyen T D, Gronsky R, Kortright J B
Center for X-Ray Optics, Lawrence Berkeley Laboratory, University of California, Berkeley 94720.
J Electron Microsc Tech. 1991 Dec;19(4):473-85. doi: 10.1002/jemt.1060190410.
A simple method for preparing cross-sectional transmission electron microscopy specimens and discussions of possible artifacts from specimen preparation and observation of x-ray multilayer thin film structures are presented. The specimen preparation method employs mechanical grinding and polishing to approximately 20 microns, followed by ion milling, without dimpling. Artifacts such as preferential ion milling and crystallization under the electron beam, as well as effects of Fresnel fringes at interfaces, are important factors in interpretation of the images. Care in identifying them is required to avoid erroneous results in studies of morphology and microstructures within the layers and at their interfaces. Example high-resolution TEM results of cross-sectional W/C, Ru/C, and Mo/Si multilayers are presented.
介绍了一种制备横截面透射电子显微镜标本的简单方法，并讨论了标本制备过程中可能出现的伪像以及X射线多层薄膜结构的观察。标本制备方法采用机械研磨和抛光至约20微米，然后进行离子铣削，无需凹坑处理。诸如优先离子铣削和电子束下的结晶等伪像，以及界面处菲涅耳条纹的影响，是图像解释中的重要因素。在识别它们时需要小心，以避免在层内及其界面处的形态和微观结构研究中得出错误结果。给出了横截面W/C、Ru/C和Mo/Si多层膜的高分辨率TEM示例结果。
