Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore.
ACS Nano. 2009 Nov 24;3(11):3431-6. doi: 10.1021/nn9008615.
In situ low-temperature scanning tunneling microscopy is used to study the growth of 3,4,9,10-perylene tetracarboxylic dianhydride (PTCDA) on epitaxial graphene (EG) on 6H-SiC(0001), as well as on HOPG for comparison. PTCDA adopts a layer-by-layer growth mode, with its molecular plane lying flat on both surfaces. The PTCDA films grow continuously over the EG step edges, but not on HOPG. STS performed on single-layer PTCDA on monolayer EG shows a wide band gap larger than 3.3 eV, consistent with pristine PTCDA films. Synchrotron-based high-resolution photoemission spectroscopy reveals weak charge transfer between PTCDA and EG. This suggests weak electronic coupling between PTCDA and the underlying EG layer.
原位低温扫描隧道显微镜用于研究 3,4,9,10-苝四羧酸二酐(PTCDA)在 6H-SiC(0001)外延石墨烯(EG)上以及在 HOPG 上的生长情况,以作对比。PTCDA 采用逐层生长模式,其分子平面在两个表面上均保持平坦。PTCDA 薄膜在 EG 台阶边缘上连续生长,但不在 HOPG 上生长。在单层 EG 上的单层 PTCDA 上进行的 STS 显示出大于 3.3eV 的宽带隙,与原始的 PTCDA 薄膜一致。基于同步加速器的高分辨率光电子能谱揭示了 PTCDA 和 EG 之间的弱电荷转移。这表明 PTCDA 和底层 EG 层之间的电子耦合较弱。