在CaRuO3缓冲层上生长的纳米晶（Ba0.65Sr0.35）TiO3薄膜的增强介电性能。

Enhanced dielectric properties of nanocrystalline (Ba0.65Sr0.35)TiO3 thin films grown on CaRuO3 buffer layers.

作者信息

Xiong H F, Tang X G, Jiang L L, Chan H L W

机构信息

School of Physics and Optoelectric Engineering, Guangdong University of Technology, Guangzhou Higher Education Mega Center, Guangzhou 510006, People's Republic of China.

出版信息

J Nanosci Nanotechnol. 2009 Oct;9(10):5834-8. doi: 10.1166/jnn.2009.1235.

DOI:10.1166/jnn.2009.1235

PMID:19908461

Abstract

Highly (100)-oriented and (110)-oriented (Ba0.65Sr0.35)TiO3 (BSTO) and (Ba0.65Sr0.35)TiO3/CaRuO3 (BSTO/CRO) heterostructure thin films, have been grown on Pt/Ti/SiO2/Si substrates prepared by pulsed laser deposition (PLD). The structure and surface morphology of the films have been characterized by X-ray diffraction (XRD) and scanning electron microscope (SEM). The dielectric constants of the films changes significantly with applied dc bias field and have high tunability of 76.3% and 78.1% at an applied field of 256.3 kV/cm, respectively for BSTO and BSTO/CRO thin films on Pt/Ti/SiO2/Si substrates. The tunability of the BSTO/CRO heterostructure thin films on Pt/Ti/SiO2/Si substrate was higher than that of the BSTO thin films on Pt/Ti/SiO2/Si substrate. The high tunability has been attributed to the (110) texture of the films and lager grain sizes.

摘要

高度（100）取向和（110）取向的（Ba0.65Sr0.35）TiO3（BSTO）以及（Ba0.65Sr0.35）TiO3/CaRuO3（BSTO/CRO）异质结构薄膜，已通过脉冲激光沉积（PLD）法生长在Pt/Ti/SiO2/Si衬底上。薄膜的结构和表面形貌已通过X射线衍射（XRD）和扫描电子显微镜（SEM）进行了表征。薄膜的介电常数随施加的直流偏置场显著变化，在256.3 kV/cm的施加场下，对于Pt/Ti/SiO2/Si衬底上的BSTO和BSTO/CRO薄膜，其可调性分别高达76.3%和78.1%。Pt/Ti/SiO2/Si衬底上的BSTO/CRO异质结构薄膜的可调性高于Pt/Ti/SiO2/Si衬底上的BSTO薄膜。这种高可调性归因于薄膜的（110）织构和较大的晶粒尺寸。