Jou Shyankay, Pan Jan-Jen, Huang Bohr-Ran
Graduate Institute of Materials Science and Technology, National Taiwan University of Science and Technology, Taipei 106, Taiwan, ROC.
J Nanosci Nanotechnol. 2009 Oct;9(10):5927-31. doi: 10.1166/jnn.2009.1242.
Silicon nanostructures were produced by sputter deposition of silicon in mixtures of hydrogen and argon, on the surface of a silicon substrate with dispersed gold islands, at a substrate temperature of 450 degrees C. Continuous Si films were deposited when the hydrogen concentration in the working gas was less than 50%. Silicon nanocone arrays were grown when the hydrogen concentration exceeded 50%. The lateral size of silicon nanocones increased with the deposition time. However, the length of the silicon nanocones saturated as the deposition time was increased. Mechanisms of the growth of Si nanocones by sputter deposition in mixtures of hydrogen and argon were discussed.
通过在氢气和氩气的混合气体中，于450摄氏度的衬底温度下，在具有分散金岛的硅衬底表面溅射沉积硅来制备硅纳米结构。当工作气体中的氢气浓度低于50%时，会沉积出连续的硅膜。当氢气浓度超过50%时，会生长出硅纳米锥阵列。硅纳米锥的横向尺寸随沉积时间增加。然而，随着沉积时间的增加，硅纳米锥的长度会饱和。讨论了在氢气和氩气混合气体中通过溅射沉积生长硅纳米锥的机制。
