Department of Materials Science and Engineering, California NanoSystems Institute, University of California at Los Angeles, Los Angeles, CA 90095, USA.
ACS Nano. 2010 Jul 27;4(7):3927-32. doi: 10.1021/nn100728p.
High quality, large grain size graphene on polycrystalline nickel film on two inch silicon wafers was successfully synthesized by the chemical vapor deposition (CVD) method. The polydimethylsiloxane (PDMS) stamping method was used for graphene transferring in this experiment. The graphene transferred onto Al2O3/ITO substrates was patterned into macroscopic dimension electrodes using conventional lithography followed by oxygen plasma etching. Experimental results show that this graphene can serve as transparent source and drain electrodes in high performance organic semiconductor nanoribbon organic field-effect transistors (OFETs), facilitating high hole injection efficiency due to the preferred work function match with the channel material: single crystalline copper phthalocyanine (CuPc) nanoribbons. The nanoribbons were grown on top of the patterned graphene via evaporate-deposition to form the FET device. The carrier mobility and on/off current ratio of such devices were measured to be as high as 0.36 cm2/(V s) and 10(4).
通过化学气相沉积（CVD）法在 2 英寸硅片上的多晶镍膜上成功合成了高质量、大晶粒尺寸的石墨烯。在本实验中，使用聚二甲基硅氧烷（PDMS）冲压法进行石墨烯转移。将转移到 Al2O3/ITO 衬底上的石墨烯使用传统光刻和氧等离子体刻蚀图形化为宏观尺寸的电极。实验结果表明，这种石墨烯可以作为高性能有机半导体纳米带有机场效应晶体管（OFET）的透明源漏电极，由于与沟道材料：单晶铜酞菁（CuPc）纳米带的功函数匹配较好，有利于实现高空穴注入效率。纳米带通过蒸发沉积在图案化的石墨烯上生长，形成 FET 器件。这种器件的载流子迁移率和开关电流比高达 0.36 cm2/（V s）和 10^4。
