Lim W S, Park J B, Park J Y, Park B J, Yeom G Y
SKKU Advanced Institute of Nano Technology, Sungkyunkwan University, Suwon, Kyunggi-do 440-746, Korea.
J Nanosci Nanotechnol. 2009 Dec;9(12):7379-82. doi: 10.1166/jnn.2009.1748.
This study examined the etch characteristics of ZrO2 etched using an atomic layer etching (ALET) system with BCl3 gas for adsorption and an Ar neutral beam for desorption. The effect of the BCl3 gas pressure and Ar neutral beam dose on the etch characteristics was examined. The results showed that the ZrO2 etch rate was maintained at a constant etch rate of 1.07 angstroms/cycle at a BCl3 gas pressure > 0.15 mTorr and an Ar beam flux > 1.485 x 1016 atoms/cm2 x cycle. Under these constant etch rate conditions, the surface roughness of the etched ZrO2 was similar to that of the as-received ZrO2. The surface composition of ZrO2 etched by ALET was compared with that etched by BCl3 inductively coupled plasma (ICP). The surface composition of ZrO2 etched by ALET showed a similar composition to that of the as-received ZrO2 while that etched by BCl3 ICP showed a Zr-rich surface.
本研究考察了使用具有用于吸附的BCl₃气体和用于解吸的Ar中性束的原子层蚀刻（ALET）系统蚀刻ZrO₂的蚀刻特性。研究了BCl₃气体压力和Ar中性束剂量对蚀刻特性的影响。结果表明，在BCl₃气体压力>0.15 mTorr且Ar束通量>1.485×10¹⁶原子/cm²·周期的条件下，ZrO₂的蚀刻速率保持在1.07埃/周期的恒定蚀刻速率。在这些恒定蚀刻速率条件下，蚀刻后的ZrO₂的表面粗糙度与原样ZrO₂的表面粗糙度相似。将通过ALET蚀刻的ZrO₂的表面成分与通过BCl₃电感耦合等离子体（ICP）蚀刻的ZrO₂的表面成分进行了比较。通过ALET蚀刻的ZrO₂的表面成分与原样ZrO₂的表面成分相似，而通过BCl₃ ICP蚀刻的ZrO₂的表面显示出富Zr表面。
