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数字纸显示器精密纳米结构修复中双椭圆形工具的设计

Design of a twins-oval tool in a precise nanostructure reclamation of digital paper displays.

作者信息

Pa P S

机构信息

Department of Digital Content Design, Graduate School of Toy and Game Design, National Taipei University of Education, Taipei City 106, Taiwan.

出版信息

J Nanosci Nanotechnol. 2009 Aug;9(8):4851-7. doi: 10.1166/jnn.2009.1089.

DOI:10.1166/jnn.2009.1089
PMID:19928161
Abstract

A new mechanism modus of micro ultrasonic electroremoval (MUERM) using a precise nanostructure reclamation and a design twins-oval tool offering faster performance in removing the Indium-tin-oxide (In2O3SnO2) thin-films from the surface of the optical PET-diaphragm (PET) of digital paper is demonstrated. Through the ultra-precise etching of the nanostructure, the semiconductor industry can effectively reclaim defective products, thereby reducing production costs. For the removal-process, a faster feed rate of the PET combined with a higher electric current produces a faster removal rate. Using ultrasonic energy transmitted into the electrolyte to assist in the chemical reaction can improve the effect of dreg discharge and contributes to the achievement of a fast PET feed rate. The average removal effect of the ultrasonics is better than the pulsed current while the current rating needs not to be prolonged. The high rotational speed of the twins-oval tool increases the dreg discharge mobility and improves the removal effect. A small height of the anode and the cathode, or a large width of the cathode corresponds to a higher removal rate for the In2O3SnO2. A small arc edge radius of the anode and the cathode also corresponds to a higher removal rate for the In2O3SnO2.

摘要

展示了一种新型的微超声电去除(MUERM)机制模式,该模式采用精确的纳米结构回收技术和一种双椭圆形设计工具,在从数字纸张的光学聚对苯二甲酸乙二酯隔膜(PET)表面去除氧化铟锡(In2O3SnO2)薄膜方面具有更快的性能。通过对纳米结构进行超精确蚀刻,半导体行业能够有效回收有缺陷的产品,从而降低生产成本。对于去除过程,PET更快的进给速度与更高的电流相结合可产生更快的去除速率。利用传输到电解液中的超声能量来辅助化学反应,可改善排渣效果,并有助于实现PET的快速进给速度。在不延长电流额定值的情况下,超声的平均去除效果优于脉冲电流。双椭圆形工具的高转速提高了排渣迁移率并改善了去除效果。阳极和阴极的小高度或阴极的大宽度对应于In2O3SnO2更高的去除速率。阳极和阴极的小弧形边缘半径也对应于In2O3SnO2更高的去除速率。

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