通过紫外线辐照退火制备的As2S8硫族化物通道波导的制造与传播特性研究

Fabrication and propagation characterization of As2S8 chalcogenide channel waveguide made by UV irradiation annealing.

作者信息

Zou Lin Er, Chen Bao Xue, Lin He San, Hamanaka Hiromi, Iso Mamoru

机构信息

Department of Physics, Nanchang University, Nanchang, 330031, China.

出版信息

Appl Opt. 2009 Nov 20;48(33):6442-7. doi: 10.1364/AO.48.006442.

DOI:10.1364/AO.48.006442

PMID:19935963

Abstract

Changes in the refractive index of amorphous chalcogenide As2S8 films upon ultraviolet (UV) exposure and annealing at different temperatures are investigated in detail, indicating an index contrast of the order of 10(-2) in the As2S8 channel waveguide. An As2S8 channel waveguide is fabricated using UV well irradiation and then annealing near the glass transition temperature and shows a low propagation loss of 0.76 dB/cm and good propagation characterization at the 1310 nm guided mode.

摘要

详细研究了非晶硫属化物As2S8薄膜在紫外（UV）曝光及不同温度退火时的折射率变化，结果表明在As2S8通道波导中折射率对比度约为10^(-2)。采用紫外阱照射，然后在玻璃化转变温度附近退火的方法制备了As2S8通道波导，该波导在1310nm导模下具有0.76dB/cm的低传播损耗和良好的传播特性。