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超导异质结构中的二维正常态量子振荡。

Two-dimensional normal-state quantum oscillations in a superconducting heterostructure.

机构信息

Department of Advanced Materials Science, University of Tokyo, Kashiwa, Chiba 277-8561, Japan.

出版信息

Nature. 2009 Nov 26;462(7272):487-90. doi: 10.1038/nature08566.

DOI:10.1038/nature08566
PMID:19940921
Abstract

Semiconductor heterostructures provide an ideal platform for studying high-mobility, low-density electrons in reduced dimensions. The realization of superconductivity in heavily doped diamond, silicon, silicon carbide and germanium suggests that Cooper pairs eventually may be directly incorporated in semiconductor heterostructures, but these newly discovered superconductors are currently limited by their extremely large electronic disorder. Similarly, the electron mean free path in low-dimensional superconducting thin films is usually limited by interface scattering, in single-crystal or polycrystalline samples, or atomic-scale disorder, in amorphous materials, confining these examples to the extreme 'dirty limit'. Here we report the fabrication of a high-quality superconducting layer within a thin-film heterostructure based on SrTiO(3) (the first known superconducting semiconductor). By selectively doping a narrow region of SrTiO(3) with the electron-donor niobium, we form a superconductor that is two-dimensional, as probed by the anisotropy of the upper critical magnetic field. Unlike in previous examples, however, the electron mobility is high enough that the normal-state resistance exhibits Shubnikov-de Haas oscillations that scale with the perpendicular field, indicating two-dimensional states. These results suggest that delta-doped SrTiO(3) provides a model system in which to explore the quantum transport and interplay of both superconducting and normal electrons. They also demonstrate that high-quality complex oxide heterostructures can maintain electron coherence on the macroscopic scales probed by transport, as well as on the microscopic scales demonstrated previously.

摘要

半导体异质结构为研究在缩减尺寸下具有高迁移率、低密度的电子提供了理想的平台。在重掺杂的金刚石、硅、碳化硅和锗中实现超导表明,库珀对最终可能直接被纳入半导体异质结构中,但这些新发现的超导体目前受到其极高电子无序性的限制。同样,在低维超导薄膜中,电子的平均自由程通常受到界面散射的限制,无论是在单晶或多晶样品中,还是在非晶材料中的原子尺度无序,这些例子都局限于极端的“脏极限”。在这里,我们报告了在基于 SrTiO(3)(已知的第一个超导半导体)的薄膜异质结构中制造高质量超导层的结果。通过选择性地在 SrTiO(3)的窄区域掺杂电子供体铌,我们形成了一个二维超导体,这可以通过上临界磁场的各向异性来探测到。然而,与之前的例子不同,电子迁移率足够高,以至于正常态电阻表现出与垂直磁场成比例的 Shubnikov-de Haas 振荡,表明存在二维状态。这些结果表明,δ掺杂 SrTiO(3) 提供了一个模型系统,可以用来探索超导和正常电子的量子输运和相互作用。它们还表明,高质量的复杂氧化物异质结构可以在传输探测到的宏观尺度上以及以前证明的微观尺度上保持电子相干性。

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