Ok Jong Mok, Mohanta Narayan, Zhang Jie, Yoon Sangmoon, Okamoto Satoshi, Choi Eun Sang, Zhou Hua, Briggeman Megan, Irvin Patrick, Lupini Andrew R, Pai Yun-Yi, Skoropata Elizabeth, Sohn Changhee, Li Haoxiang, Miao Hu, Lawrie Benjamin, Choi Woo Seok, Eres Gyula, Levy Jeremy, Lee Ho Nyung
Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA.
National High Magnetic Field Laboratory, Florida State University, Tallahassee, FL 32310, USA.
Sci Adv. 2021 Sep 17;7(38):eabf9631. doi: 10.1126/sciadv.abf9631. Epub 2021 Sep 15.
Quantum materials (QMs) with strong correlation and nontrivial topology are indispensable to next-generation information and computing technologies. Exploitation of topological band structure is an ideal starting point to realize correlated topological QMs. Here, we report that strain-induced symmetry modification in correlated oxide SrNbO thin films creates an emerging topological band structure. Dirac electrons in strained SrNbO films reveal ultrahigh mobility (μ ≈ 100,000 cm/Vs), exceptionally small effective mass (* ~ 0.04), and nonzero Berry phase. Strained SrNbO films reach the extreme quantum limit, exhibiting a sign of fractional occupation of Landau levels and giant mass enhancement. Our results suggest that symmetry-modified SrNbO is a rare example of correlated oxide Dirac semimetals, in which strong correlation of Dirac electrons leads to the realization of a novel correlated topological QM.
具有强关联和非平凡拓扑的量子材料对于下一代信息和计算技术不可或缺。利用拓扑能带结构是实现关联拓扑量子材料的理想起点。在此,我们报道了在关联氧化物SrNbO薄膜中应变诱导的对称性修饰产生了一种新兴的拓扑能带结构。应变SrNbO薄膜中的狄拉克电子展现出超高迁移率(μ≈100,000 cm²/V·s)、异常小的有效质量(*≈0.04)以及非零贝里相位。应变SrNbO薄膜达到了极端量子极限,表现出朗道能级分数占据的迹象和巨大的质量增强。我们的结果表明,对称性修饰的SrNbO是关联氧化物狄拉克半金属的罕见例子,其中狄拉克电子的强关联导致了一种新型关联拓扑量子材料的实现。