Quantum Dot Research Center, National Institute for Materials Science, Tsukuba, Ibaraki, Japan.
Nanotechnology. 2010 Jan 15;21(2):025303. doi: 10.1088/0957-4484/21/2/025303. Epub 2009 Dec 3.
It is shown how a significant drawback of the electron beam induced deposition technique, namely its low deposition rate, can be circumvented. By tilting a sample, a larger part of the primary electron beam energy becomes dissipated closer to the interface. This in turn increases the emission of secondary electrons, largely responsible for the deposition of the adsorbed molecule components on the surface. An order of magnitude increase in the deposition rate is reported in the fabrication of metal nanowires from organic precursor gas.
本文展示了如何克服电子束诱导沉积技术的一个显著缺点，即沉积速率低。通过倾斜样品，可以使更多的初级电子束能量在靠近界面处耗散，从而增加二次电子的发射，这对于吸附在表面的分子成分的沉积起着重要作用。在利用有机前体气体制备金属纳米线的过程中，沉积速率提高了一个数量级。
