Institute for Electron Microscopy, Graz University of Technology, Steyrergasse 17, 8010 Graz, Austria.
ACS Nano. 2012 Jan 24;6(1):286-94. doi: 10.1021/nn204237h. Epub 2011 Dec 23.
Fundamental proximity effects for electron beam induced deposition processes on nonflat surfaces were studied experimentally and via simulation. Two specific effects were elucidated and exploited to considerably increase the volumetric growth rate of this nanoscale direct write method: (1) increasing the scanning electron pitch to the scale of the lateral electron straggle increased the volumetric growth rate by 250% by enhancing the effective forward scattered, backscattered, and secondary electron coefficients as well as by strong recollection effects of adjacent features; and (2) strategic patterning sequences are introduced to reduce precursor depletion effects which increase volumetric growth rates by more than 90%, demonstrating the strong influence of patterning parameters on the final performance of this powerful direct write technique.
我们对非平整表面的电子束诱导沉积过程中的基础近场效应进行了实验和模拟研究。我们阐明并利用了两种特定效应，以极大地提高这种纳米级直接写入方法的体积增长率：(1) 通过增强有效向前散射、反向散射和二次电子系数以及相邻特征的强烈再捕获效应，将扫描电子束的间距增大到横向电子扩散的尺度，从而将体积增长率提高了 250%；(2) 引入了策略性的图案化序列，以减少前体耗尽效应，从而使体积增长率提高了 90%以上，这表明图案化参数对这种强大的直接写入技术的最终性能具有重要影响。
