Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore.
Nano Lett. 2010 Jan;10(1):92-8. doi: 10.1021/nl9028736.
The ability to print graphene sheets onto large scale, flexible substrates holds promise for large scale, transparent electronics on flexible substrates. Solution processable graphene sheets derived from graphite can form stable dispersions in solutions and are amenable to bulk scale processing and ink jet printing. However, the electrical conductivity and carrier mobilities of this material are usually reported to be orders of magnitude poorer than that of the mechanically cleaved counterpart due to its higher density of defects, which restricts its use in electronics. Here, we show that by optimizing several key factors in processing, we are able to fabricate high mobility graphene films derived from large sized graphene oxide sheets, which paves the way for all-carbon post-CMOS electronics. All-carbon source-drain channel electronics fabricated from such films exhibit significantly improved transport characteristics, with carrier mobilities of 365 cm(2)/(V.s) for hole and 281 cm(2)/(V.s) for electron, measured in air at room temperature. In particular, intrinsic mobility as high as 5000 cm(2)/(V.s) can be obtained from such solution-processed graphene films when ionic screening is applied to nullify the Coulombic scattering by charged impurities.
将石墨烯薄片打印到大规模、柔性衬底上的能力有望实现大规模、透明的柔性衬底电子器件。从石墨中提取的可溶液处理的石墨烯薄片可以在溶液中形成稳定的分散体,并且适合大规模处理和喷墨打印。然而,由于其较高的缺陷密度,这种材料的电导率和载流子迁移率通常比机械剥离的对应物低几个数量级,这限制了其在电子学中的应用。在这里,我们表明通过优化处理中的几个关键因素,我们能够制造出由大尺寸氧化石墨烯片衍生的高迁移率石墨烯薄膜,这为全碳后 CMOS 电子学铺平了道路。由这种薄膜制造的全碳源漏通道电子器件表现出显著改善的传输特性,在室温下空气中的空穴迁移率为 365 cm(2)/(V.s),电子迁移率为 281 cm(2)/(V.s)。特别是,当应用离子屏蔽来消除带电杂质的库仑散射时,从这种溶液处理的石墨烯薄膜中可以获得高达 5000 cm(2)/(V.s)的固有迁移率。