Department of Electrical Engineering, National Central University, ChungLi, Taiwan 320, Republic of China.
Nanotechnology. 2010 Feb 5;21(5):055302. doi: 10.1088/0957-4484/21/5/055302. Epub 2009 Dec 24.
This study demonstrates the precise placement of Ge quantum dots (QDs) in an SiO2 or Si3N4 matrix in a self-organized manner by thermally oxidizing SiGe in nanostructures. The effectiveness of this method is shown by a variety of geometries including nanotrenches, nanorods and polygonal nanocavities. Modulating the structural geometry and peripheral spacer materials effectively places a single Ge QD in the center of an oxidized SiGe nanostructure or individual QDs at the corners (edges). This study also reports the fabrication of Ge QD single-electron devices that exhibit clear Coulomb staircases and differential conductance oscillations at room temperature.
本研究通过在纳米结构中热氧化 SiGe，展示了 Ge 量子点 (QD) 在 SiO2 或 Si3N4 基质中以自组织方式的精确位置。这种方法的有效性通过各种几何形状得到了证明，包括纳米沟槽、纳米棒和多边形纳米腔。通过调节结构几何形状和外围间隔材料，可以有效地将单个 Ge QD 放置在氧化 SiGe 纳米结构的中心或单个 QD 放置在角（边缘）处。本研究还报告了 Ge QD 单电子器件的制造，该器件在室温下表现出清晰的库仑阶梯和微分电导振荡。
