Self-organized formation and self-repair of a two-dimensional nanoarray of Ge quantum dots epitaxially grown on ultrathin SiO2-covered Si substrates.

Two-dimensional nanoarrays of Ge quantum dots (QDs) with the ability to self-repair were epitaxially grown by self-organization on Si substrates using an ultrathin SiO(2) film technique. Nanometer-sized voids were patterned on ultrathin SiO(2) films by transcription of the pattern of block copolymer films using a selective etching method and worked as nucleation sites for QD growth. The epitaxial QDs were elastically strain-relaxed without misfit dislocations and of uniform size. The epitaxial structures of Si-capped QD nanoarrays exhibited strong photoluminescence near 1.5 microm.