Department of Electrical Engineering, National Central University, ChungLi, 320, Taiwan, Republic of China.
Nanotechnology. 2010 Dec 17;21(50):505201. doi: 10.1088/0957-4484/21/50/505201. Epub 2010 Nov 22.
We report a simple and manageable growth method for placing dense three-dimensional Ge quantum dot (QD) arrays in a uniform or a graded size distribution, based on thermally oxidizing stacked poly-SiGe in a layer-cake technique. The QD size and spatial density in each stack can be modulated by conditions of the Ge content in poly-Si(1-x)Ge(x), oxidation, and the underlay buffer layer. Size-dependent internal structure, strain, and photoluminescence properties of Ge QDs are systematically investigated. Optimization of the processing conditions could be carried out for producing dense Ge QD arrays to maximize photovoltaic efficiency.
我们报告了一种简单且易于控制的生长方法，可在层叠技术中通过热氧化堆叠的多晶硅锗（poly-SiGe）来制备具有均匀或分级尺寸分布的密集三维 Ge 量子点（QD）阵列。每个堆叠中的 QD 尺寸和空间密度可以通过 poly-Si(1-x)Ge(x)中的 Ge 含量、氧化和底层缓冲层的条件来调节。系统研究了 Ge QD 的尺寸相关内部结构、应变和光致发光特性。可以优化处理条件以生产密集的 Ge QD 阵列，从而最大程度地提高光伏效率。
