Nan Tianxiang, Hui Yu, Rinaldi Matteo, Sun Nian X
Department of Electrical and Computer Engineering, Northeastern University, Boston, MA 02115, USA.
Sci Rep. 2013;3:1985. doi: 10.1038/srep01985.
High sensitivity magnetoelectric sensors with their electromechanical resonance frequencies < 200 kHz have been recently demonstrated using magnetostrictive/piezoelectric magnetoelectric heterostructures. In this work, we demonstrate a novel magnetoelectric nano-electromechanical systems (NEMS) resonator with an electromechanical resonance frequency of 215 MHz based on an AlN/(FeGaB/Al2O3) × 10 magnetoelectric heterostructure for detecting DC magnetic fields. This magnetoelectric NEMS resonator showed a high quality factor of 735, and strong magnetoelectric coupling with a large voltage tunable sensitivity. The admittance of the magnetoelectric NEMS resonator was very sensitive to DC magnetic fields at its electromechanical resonance, which led to a new detection mechanism for ultra-sensitive self-biased RF NEMS magnetoelectric sensor with a low limit of detection of DC magnetic fields of ~300 picoTelsa. The magnetic/piezoelectric heterostructure based RF NEMS magnetoelectric sensor is compact, power efficient and readily integrated with CMOS technology, which represents a new class of ultra-sensitive magnetometers for DC and low frequency AC magnetic fields.
最近，利用磁致伸缩/压电磁电异质结构展示了机电共振频率低于200 kHz的高灵敏度磁电传感器。在这项工作中，我们展示了一种基于AlN/(FeGaB/Al2O3)×10磁电异质结构的新型磁电纳米机电系统（NEMS）谐振器，其机电共振频率为215 MHz，用于检测直流磁场。这种磁电NEMS谐振器表现出735的高品质因数，以及具有大电压可调灵敏度的强磁电耦合。磁电NEMS谐振器的导纳在其机电共振时对直流磁场非常敏感，这导致了一种用于超灵敏自偏置射频NEMS磁电传感器的新检测机制，其直流磁场检测下限低至约300皮特斯拉。基于磁/压电异质结构的射频NEMS磁电传感器结构紧凑、功耗低且易于与CMOS技术集成，代表了一类用于直流和低频交流磁场的新型超灵敏磁力计。
