Department of Electrical Engineering, I-Shou University, Kaohsiung, Taiwan, Republic of China.
IEEE Trans Ultrason Ferroelectr Freq Control. 2010 Jan;57(1):46-51. doi: 10.1109/TUFFC.2010.1377.
In this study, the finite element method is employed to calculate SAW characteristics in (100) AlN/diamond based structures with different electrical interfaces; i.e., IDT/ AlN/diamond, AlN/IDT/diamond, IDT/AlN/thin metal film/ diamond, and thin metal film/AlN/IDT/diamond. The effects of Cu and Al electrodes as well as the thickness of electrode on phase velocity, coupling coefficient, and reflectivity of SAWs are illustrated. Propagation characteristics of SAWs in (002) AlN/diamond-based structures are also presented for comparison. Simulation results show that to retain a large reflectivity for the design of RF filters and duplexers, the Cu IDT/(100) AlN/diamond structure possesses the highest phase velocity and largest coupling coefficient at the smallest AlN film thickness- to-wavelength ratio.
在这项研究中,采用有限元方法计算了不同电接口的(100)AlN/金刚石基结构中的表面声波特性;即 IDT/AlN/金刚石、AlN/IDT/金刚石、IDT/AlN/薄金属膜/金刚石和薄金属膜/AlN/IDT/金刚石。说明了 Cu 和 Al 电极以及电极厚度对表面声波相速度、耦合系数和反射率的影响。还给出了(002)AlN/金刚石基结构中表面声波的传播特性作为比较。模拟结果表明,为了在射频滤波器和双工器的设计中保持高反射率,Cu IDT/(100)AlN/金刚石结构在最小的 AlN 薄膜厚度与波长比下具有最高的相速度和最大的耦合系数。