基于 AlN/SiO₂/Si(100)的 CMOS 兼容声表面波器件的瑞利波的有限元模拟
FEM simulation of Rayleigh waves for CMOS compatible SAW devices based on AlN/SiO₂/Si(100).
机构信息
IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany.
出版信息
Ultrasonics. 2014 Jan;54(1):291-5. doi: 10.1016/j.ultras.2013.04.009. Epub 2013 Apr 18.
A simulation study of Rayleigh wave devices based on a stacked AlN/SiO₂/Si(100) device was carried out. Dispersion curves with respect to acoustic phase velocity, reflectivity and electromechanical coupling efficiency for tungsten W and aluminium Al electrodes and different layer thicknesses were quantified by 2D FEM COMSOL simulations. Simulated acoustic mode shapes are presented. The impact of these parameters on the observed Rayleigh wave modes was discussed. High coupling factors of 2% and high velocities up to 5000 m/s were obtained by optimizing the AlN/SiO₂ thickness ratio.
基于堆叠的 AlN/SiO₂/Si(100) 器件的瑞利波器件的仿真研究。通过二维有限元 COMSOL 模拟，量化了钨 W 和铝 Al 电极以及不同层厚度的声相速度、反射率和机电耦合效率的频散曲线。给出了模拟的声波模态。讨论了这些参数对观察到的瑞利波模式的影响。通过优化 AlN/SiO₂ 厚度比，获得了 2%的高耦合系数和高达 5000 m/s 的高速。
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