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具有金刚石/氮化铝/叉指换能器/氮化铝/金刚石多层结构的高频表面声波谐振器

High-Frequency Surface Acoustic Wave Resonator with Diamond/AlN/IDT/AlN/Diamond Multilayer Structure.

作者信息

Lei Liang, Dong Bo, Hu Yuxuan, Lei Yisong, Wang Zhizhong, Ruan Shuangchen

机构信息

College of Integrated Circuits and Optoelectronic Chips, Shenzhen Technology University, Shenzhen 518118, China.

出版信息

Sensors (Basel). 2022 Aug 28;22(17):6479. doi: 10.3390/s22176479.

DOI:10.3390/s22176479
PMID:36080938
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9460613/
Abstract

A high-frequency surface acoustic wave (SAW) resonator, based on sandwiched interdigital transducer (IDT), is presented. The resonator has the structure of diamond/AlN/IDT/AlN/diamond, with Si as the substrate. The results show that its phase velocity and electromechanical coupling coefficient are both significantly improved, compared with that of the traditional interdigital transduce-free surface structure. The M2 mode of the sandwiched structure can excite an operation frequency up to 6.15 GHz, with an electromechanical coupling coefficient of 5.53%, phase velocity of 12,470 m/s, and temperature coefficient of frequency of -6.3 ppm/°C. This structure provides a new ideal for the design of high-performance and high-frequency SAW devices.

摘要

本文提出了一种基于夹心叉指换能器(IDT)的高频表面声波(SAW)谐振器。该谐振器具有金刚石/氮化铝/叉指换能器/氮化铝/金刚石结构,以硅为衬底。结果表明,与传统的无叉指换能器表面结构相比,其相速度和机电耦合系数均有显著提高。夹心结构的M2模式可激发高达6.15 GHz的工作频率,机电耦合系数为5.53%,相速度为12470 m/s,频率温度系数为-6.3 ppm/°C。这种结构为高性能高频SAW器件的设计提供了新的理想方案。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cd24/9460613/ce89344e67f5/sensors-22-06479-g011.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cd24/9460613/f8b4fcd3e68e/sensors-22-06479-g001.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cd24/9460613/064007b78d3e/sensors-22-06479-g005.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cd24/9460613/bba6a9401221/sensors-22-06479-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cd24/9460613/7442205b2e6c/sensors-22-06479-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cd24/9460613/b85fe5563e04/sensors-22-06479-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cd24/9460613/ce89344e67f5/sensors-22-06479-g011.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cd24/9460613/f8b4fcd3e68e/sensors-22-06479-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cd24/9460613/438dc295f132/sensors-22-06479-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cd24/9460613/e393b35f3dae/sensors-22-06479-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cd24/9460613/4beadce79953/sensors-22-06479-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cd24/9460613/064007b78d3e/sensors-22-06479-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cd24/9460613/e6f671b04f71/sensors-22-06479-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cd24/9460613/7cc9a93bd6fd/sensors-22-06479-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cd24/9460613/bba6a9401221/sensors-22-06479-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cd24/9460613/7442205b2e6c/sensors-22-06479-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cd24/9460613/b85fe5563e04/sensors-22-06479-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cd24/9460613/ce89344e67f5/sensors-22-06479-g011.jpg

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本文引用的文献

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Structure with thin SiO/SiN bilayer and Al electrodes for high-frequency, large-coupling, and low-cost surface acoustic wave devices.用于高频、大耦合和低成本表面声波器件的具有SiO/SiN双层薄膜和铝电极的结构
Ultrasonics. 2021 Aug;115:106460. doi: 10.1016/j.ultras.2021.106460. Epub 2021 May 17.
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High-velocity non-attenuated acoustic waves in LiTaO/quartz layered substrates for high frequency resonators.用于高频谐振器的LiTaO/石英层状衬底中的高速无衰减声波。
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Surface acoustic wave microfluidics.
表面声波微流控技术。
Lab Chip. 2013 Sep 21;13(18):3626-49. doi: 10.1039/c3lc50361e.
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