Department of Physics and Astronomy, Seoul National University, Daehak-dong, Gwanak-gu, Seoul, Korea 151-747.
Langmuir. 2010 Feb 2;26(3):1507-11. doi: 10.1021/la903820t.
We report a direct deposition strategy for sub-50-nm-scale uniform Au patterns on virtually any general insulating substrate via dip-pen nanolithography (DPN). In that process, HAuCl(4) molecules were deposited onto bare insulating substrates via a molecular diffusion process, in the absence of electrochemical reactions. Subsequently, the generated HAuCl(4) molecular patterns were decomposed to leave Au-only patterns using a thermal annealing process. Uniform Au patterns with a mean diameter of 47.9 +/- 3.1 nm were achieved after the annealing process. The strategy allowed us to generate Au patterns on virtually any general insulating substrate (e.g., SiO(2), Al(2)O(3), polyimide, etc) without the need for surface functionalization or additional electrode structures. This versatile and reliable patterning method is expected to be useful in the future development of various novel industrial applications (e.g., mask or nanocircuit repair, nanosensors, etc.).
我们报告了一种直接沉积策略，通过蘸笔纳米光刻（DPN）在几乎任何普通绝缘衬底上直接沉积亚 50nm 尺度均匀的 Au 图案。在该过程中，HAuCl4 分子通过分子扩散过程沉积在裸的绝缘衬底上，而无需电化学反应。随后，通过热退火过程将生成的 HAuCl4 分子图案分解，只留下 Au 图案。退火后，得到的均一 Au 图案的平均直径为 47.9 ± 3.1nm。该策略允许我们在几乎任何普通绝缘衬底（例如 SiO2、Al2O3、聚酰亚胺等）上生成 Au 图案，而无需表面功能化或额外的电极结构。这种通用且可靠的图案化方法有望在未来各种新型工业应用（例如掩模或纳米电路修复、纳米传感器等）的发展中得到应用。
