Ding Lei, Li Yan, Chu Haibin, Li Xuemei, Liu Jie
Key Laboratory for the Physics and Chemistry of Nanodevices, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China.
J Phys Chem B. 2005 Dec 1;109(47):22337-40. doi: 10.1021/jp053389r.
A dip-pen nanolithography (DPN) process capable of depositing nanoscaled structures of semiconducting CdS materials was developed by careful control of the reaction speed between the precursors. The new development expanded the scope of the powerful DPN process and provided more insight in the deposition mechanism. Features ranging from several hundreds of nanometers to sub-50 nanometers were generated and characterized. The effects of the surface property of the substrate, the relative humidity, the translating rate, and the temperature were systematically investigated. X-ray photoelectron spectroscopy (XPS) was used to verify the chemical composition of the patterns. In principle, this simple and convenient method should be applicable to deposit various metal sulfides on suitable substrates.
通过精确控制前驱体之间的反应速度，开发出一种能够沉积半导体硫化镉材料纳米级结构的蘸笔纳米光刻（DPN）工艺。这一新进展扩展了强大的DPN工艺的应用范围，并为沉积机制提供了更多见解。生成并表征了从几百纳米到小于50纳米的各种特征。系统研究了基底表面性质、相对湿度、平移速率和温度的影响。利用X射线光电子能谱（XPS）验证图案的化学成分。原则上，这种简单便捷的方法应适用于在合适的基底上沉积各种金属硫化物。
