Department of Chemistry, KAIST, Daejeon 305-701, Korea.
Nano Lett. 2010 Feb 10;10(2):432-8. doi: 10.1021/nl903002x.
We have synthesized epitaxial Au, Pd, and AuPd nanowire arrays in vertical or horizontal alignment on a c-cut sapphire substrate. We show that the vertical and horizontal nanowire arrays grow from half-octahedral seeds by the correlations of the geometry and orientation of seed crystals with those of as-grown nanowires. The alignment of nanowires can be steered by changing the atom flux. At low atom deposition flux vertical nanowires grow, while at high atom flux horizontal nanowires grow. Similar vertical/horizontal epitaxial growth is also demonstrated on SrTiO(3) substrates. This orientation-steering mechanism is visualized by molecular dynamics simulations.
我们已经在 c 切蓝宝石衬底上合成了垂直或水平排列的外延 Au、Pd 和 AuPd 纳米线阵列。我们表明，垂直和水平纳米线阵列通过种子晶体的几何形状和取向与所生长的纳米线的取向之间的相关性，从半八面体种子生长而来。通过改变原子通量可以控制纳米线的取向。在低原子沉积通量下，垂直纳米线生长，而在高原子通量下，水平纳米线生长。在 SrTiO(3) 衬底上也证明了类似的垂直/水平外延生长。通过分子动力学模拟可视化了这种取向控制机制。
