50吉比特每秒混合硅基行波电吸收调制器

50 Gb/s hybrid silicon traveling-wave electroabsorption modulator.

作者信息

Tang Yongbo, Chen Hui-Wen, Jain Siddharth, Peters Jonathan D, Westergren Urban, Bowers John E

机构信息

Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, CA 93106, USA.

出版信息

Opt Express. 2011 Mar 28;19(7):5811-6. doi: 10.1364/OE.19.005811.

DOI:10.1364/OE.19.005811

PMID:21451605

Abstract

We have demonstrated a traveling-wave electroabsorption modulator based on the hybrid silicon platform. For a device with a 100 μm active segment, the small-signal electro/optical response renders a 3 dB bandwidth of around 42 GHz and its modulation efficiency reaches 23 GHz/V. A dynamic extinction ratio of 9.8 dB with a driving voltage swing of only 2 V was demonstrated at a transmission rate of 50 Gb/s. This represents a significant improvement for modulators compatible with integration of silicon-based photonic integrated circuits.

摘要

我们展示了一种基于混合硅平台的行波电吸收调制器。对于一个有源段为100μm的器件，其小信号电光响应的3dB带宽约为42GHz，调制效率达到23GHz/V。在50Gb/s的传输速率下，仅2V的驱动电压摆幅就实现了9.8dB的动态消光比。这对于与硅基光子集成电路集成兼容的调制器来说是一个显著的改进。