Institute of Solid State Physics, University of Bremen, Bremen, Germany.
Nanotechnology. 2010 Feb 10;21(6):065709. doi: 10.1088/0957-4484/21/6/065709. Epub 2010 Jan 8.
We report on the photoluminescence properties of ZnO nanowires treated with a mild Ar plasma. The nanowires exhibited stable and strong enhancement of the near-band-edge emission and quenching of the deep level emission. The low temperature PL revealed a strong hydrogen donor-bound-exciton line in the plasma-treated samples indicating unintentional incorporation of hydrogen during the plasma treatment. To confirm the results, hydrogen was implanted into the ZnO nanowires with a low ion energy of 600 eV and different fluences. The observed result can be related to the passivation of deep centers by hydrogen. The absolute photoluminescence intensity measured by an integrating sphere showed stable and strong UV emission from the treated samples even after several weeks.
我们报告了经过温和 Ar 等离子体处理的 ZnO 纳米线的光致发光特性。纳米线表现出近带边发射的稳定和强烈增强，以及深能级发射的猝灭。低温 PL 显示出在等离子体处理的样品中存在强烈的氢施主束缚激子线，表明在等离子体处理过程中无意掺入了氢。为了确认结果，我们用低离子能量 600 eV 和不同的剂量将氢注入 ZnO 纳米线中。观察到的结果可以归因于氢对深能级中心的钝化。通过积分球测量的绝对光致发光强度表明，即使经过数周后，处理后的样品仍具有稳定且强烈的紫外发射。
