Richters J-P, Voss T, Kim D S, Scholz R, Zacharias M
Institute of Semiconductor Optics, University of Bremen, Otto-Hahn-Allee 1, D-28359 Bremen, Germany.
Nanotechnology. 2008 Jul 30;19(30):305202. doi: 10.1088/0957-4484/19/30/305202. Epub 2008 Jun 12.
We report the influence of an Al(2)O(3) shell on the photoluminescence emission of ZnO nanowires. At room temperature, the spectrum of the core-shell nanowires shows a strong reduction of the relative intensity of the green defect emission with respect to the near-band-edge emission. At 5 K an increase of the relative intensity of the surface exciton band with respect to the donor-bound exciton emission is observed. Annealing the core-shell nanowires at 500 °C does not increase the green defect luminescence at 5 K. We propose a model explaining the spectral changes.
我们报道了Al₂O₃壳层对ZnO纳米线光致发光发射的影响。在室温下,核壳纳米线的光谱显示,相对于近带边发射,绿色缺陷发射的相对强度大幅降低。在5K时,观察到表面激子带相对于施主束缚激子发射的相对强度增加。在500 °C对核壳纳米线进行退火处理并不会增加其在5K时的绿色缺陷发光。我们提出了一个解释光谱变化的模型。