晶圆级合成具有可控转角的单晶 zigzag 硅纳米线阵列。

Wafer-scale synthesis of single-crystal zigzag silicon nanowire arrays with controlled turning angles.

机构信息

Nano-organic Photoelectronic Laboratory and Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China.

出版信息

Nano Lett. 2010 Mar 10;10(3):864-8. doi: 10.1021/nl903391x.

DOI:10.1021/nl903391x

PMID:20104856

Abstract

Silicon nanowires (SiNWs) having curved structures may have unique advantages in device fabrication. However, no methods are available to prepare curved SiNWs controllably. In this work, we report the preparation of three types of single-crystal SiNWs with various turning angles via metal-assisted chemical etching using (111)-oriented silicon wafers near room temperature. The zigzag SiNWs are single crystals and can be p- or n-doped using corresponding Si wafer as substrate. The controlled growth direction is attributed to the preferred movement of Ag nanoparticles along 001 and other directions in Si wafer. Our results demonstrate that metal-assisted chemical etching may be a viable approach to fabricate SiNWs with desired turning angles by utilizing the various crystalline directions in a Si wafer.

摘要

硅纳米线（SiNWs）具有弯曲结构，在器件制造方面可能具有独特的优势。然而，目前还没有可控制备弯曲 SiNWs 的方法。在这项工作中，我们报告了在室温附近使用（111）取向的硅片通过金属辅助化学刻蚀制备三种具有不同转角的单晶 SiNWs 的方法。锯齿形 SiNWs 是单晶，可以使用相应的 Si 片作为衬底进行 p 型或 n 型掺杂。受控的生长方向归因于 Ag 纳米颗粒沿 Si 片的 001 和其他方向的优先移动。我们的结果表明，金属辅助化学刻蚀可能是一种可行的方法，通过利用 Si 片的各种晶向，制备具有所需转角的 SiNWs。