通过纳米球光刻和分子束外延制备的有序硅纳米线阵列。

Ordered arrays of silicon nanowires produced by nanosphere lithography and molecular beam epitaxy.

作者信息

Fuhrmann Bodo, Leipner Hartmut S, Höche Hans-Reiner, Schubert Luise, Werner Peter, Gösele Ulrich

机构信息

Interdisziplinäres Zentrum für Materialwissenschaften, Martin-Luther-Universität, Hoher Weg 8, D-06120 Halle, Germany.

出版信息

Nano Lett. 2005 Dec;5(12):2524-7. doi: 10.1021/nl051856a.

DOI:10.1021/nl051856a

PMID:16351208

Abstract

Because of their importance in fundamental research and possible applications in nanotechnology and nanoelectronics, semiconductor nanowires have attracted much interest. In addition to the growth itself, the control of the size and location is an essential problem. Here we show the growth of ordered arrays of vertically aligned silicon nanowires by molecular beam epitaxy using prepatterned arrays of gold droplets on Si(111) substrates. The ordered arrays of gold particles were produced by nanosphere lithography.

摘要

由于半导体纳米线在基础研究中的重要性以及在纳米技术和纳米电子学中可能的应用，它们已引起了广泛关注。除了生长本身，尺寸和位置的控制也是一个关键问题。在这里，我们展示了通过分子束外延在Si(111)衬底上使用预先图案化的金液滴阵列生长垂直排列的硅纳米线有序阵列。金颗粒的有序阵列是通过纳米球光刻法制备的。