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单个记忆B细胞的分子特征分析。

Molecular characterization of single memory B cells.

作者信息

McHeyzer-Williams M G, Nossal G J, Lalor P A

机构信息

Walter and Eliza Hall Institute of Medical Research, Royal Melbourne Hospital, Victoria, Australia.

出版信息

Nature. 1991 Apr 11;350(6318):502-5. doi: 10.1038/350502a0.

Abstract

Primary antigenic exposure results in an initial antibody response and the T cell-dependent induction of B-cell memory. Memory B-cell differentiation is characterized by somatic hypermutation in antibody variable region genes (V) and selection of B cells expressing high-affinity variants of this antigen receptor. Despite our current understanding of B-cell memory, the origin of memory B cells and the regulation of their differentiation remain elusive. This is largely due to the difficulties in observing and purifying this minor component of the immunized spleen. Further, molecular characterization of memory B cells requires hybridoma formation which restricts analyses to only those clones capable of fusion and does not allow isolation of cells in a normal physiological state. We have therefore developed a unique system which allows isolation and unambiguous enumeration of IgG1+ memory B cells, based on six-parameter flow cytometry, secretion of antibody in clonal cultures and analysis of clonally expressed V genes using the polymerase chain reaction. Here we report that single IgG1+ antigen-binding B cells from an early secondary immune response proliferate in lipopolysaccharide-driven microcultures and produce antigen-specific IgG1 antibodies. Individual B-cell clones in these cultures express somatically mutated heavy chain V genes, confirming their designation as memory B cells. Although isolated memory B cells undergo extensive proliferation in vitro, V gene sequence analysis of their individual progeny shows that further hypermutation does not occur.

摘要

初次抗原暴露会引发初始抗体反应以及T细胞依赖性B细胞记忆的诱导。记忆B细胞的分化特征是抗体可变区基因(V)发生体细胞超突变,并选择表达该抗原受体高亲和力变体的B细胞。尽管我们目前对B细胞记忆有所了解,但记忆B细胞的起源及其分化的调控机制仍不清楚。这主要是由于观察和纯化免疫脾脏中的这一微小成分存在困难。此外,记忆B细胞的分子特征分析需要形成杂交瘤,这限制了分析仅针对那些能够融合的克隆,并且不允许在正常生理状态下分离细胞。因此,我们开发了一种独特的系统,该系统基于六参数流式细胞术、克隆培养中的抗体分泌以及使用聚合酶链反应分析克隆表达的V基因,能够分离并明确计数IgG1+记忆B细胞。在此我们报告,来自早期二次免疫反应的单个IgG1+抗原结合B细胞在脂多糖驱动的微培养中增殖并产生抗原特异性IgG1抗体。这些培养物中的单个B细胞克隆表达体细胞突变的重链V基因,证实它们被归类为记忆B细胞。尽管分离的记忆B细胞在体外经历广泛增殖,但其单个后代的V基因序列分析表明不会发生进一步的超突变。

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