Multilayer GaAs-Al(0.3)Ga(0.7)As dielectric quarter wave stacks grown by molecular beam epitaxy.

Single crystal quarter wave multilayer stacks consisting of alternating layers of GaAs and Al(0.3)Ga(0.7)As were grown on GaAs substrates by the molecular beam epitaxy method. This technique is capable of a very high degree of control of film thickness and layer reproducibility. The measured reflectivity spectrum is in good agreement with the reflectivity dispersion of GaAs and Alo.gGao.7As. calculated from the equivalent layer theory using the known index dispersion of GaAs and GaAs and Al(0.3)Ga(0.7)As.