Gibbs W E, Butterfield A W
Appl Opt. 1975 Dec 1;14(12):3043-6. doi: 10.1364/AO.14.003043.
Absorption indices at a wavelength of 10.6 mum for thin films of As(2)S(3), GeSe, BaF(2), ZnSe, and CdTe were measured by calorimetric techniques with a CO(2) laser. The values obtained, 4.6 x 10(-4), 1.4 x 10(-3), 2.8 x 10(-3), 2.8 x 10(-3), and 5.0 x 10(-3), respectively, were significantly greater than the corresponding values for the bulk materials. This difference was least for the vitreous films, As(2)S(3) and GeSe, which also had a lower absorption than the remaining polycrystalline films. Details are presented of the microstructure of the films as determined by scanning electron microscopy and k-ray diffraction.
采用量热技术，利用二氧化碳激光测量了三硫化二砷（As₂S₃）、锗硒（GeSe）、氟化钡（BaF₂）、硒化锌（ZnSe）和碲化镉（CdTe）薄膜在波长为10.6微米时的吸收指数。所得到的值分别为4.6×10⁻⁴、1.4×10⁻³、2.8×10⁻³、2.8×10⁻³和5.0×10⁻³，这些值显著高于相应块状材料的值。对于玻璃态薄膜As₂S₃和GeSe，这种差异最小，它们的吸收也低于其余的多晶薄膜。文中给出了通过扫描电子显微镜和X射线衍射测定的薄膜微观结构的详细信息。
