National Institute of Materials Physics, Atomistilor Street 105 bis, Magurele, Ilfov 77125, Romania.
Nanotechnology. 2010 Mar 12;21(10):105202. doi: 10.1088/0957-4484/21/10/105202. Epub 2010 Feb 16.
Electrochemical deposition in nanoporous ion track membranes is used for the preparation of multisegment CdTe--homojunction diode nanowires. Our study is based on the fact that the deposition overpotential strongly influences the composition of the compound semiconductor nanowires. Therefore, the transport behavior of the nanowire devices can be tailored by appropriately choosing a certain sequence of electrodeposition potentials. The wires were characterized using scanning electron microscopy, energy dispersive x-ray analysis, optical spectroscopy and x-ray diffraction. The current-voltage characteristics measured prove that, by appropriately choosing the voltage pulse pattern, one can fabricate nanowires with ohmic or rectifying behavior. The semiconducting nanowires are sensitive to light, their spectral sensitivity being characteristic of CdTe. The preparation of functional nanostructures in such a simple approach provides, as a major advantage, an increase in the process reproducibility and opens a wide field of potential optoelectronic applications.
电化学沉积在纳米多孔离子轨迹膜中用于制备多段 CdTe--同质结二极管纳米线。我们的研究基于这样一个事实，即沉积过电位强烈影响化合物半导体纳米线的组成。因此，可以通过适当选择特定的电沉积电位序列来调整纳米线器件的传输行为。使用扫描电子显微镜、能量色散 X 射线分析、光学光谱和 X 射线衍射对线材进行了表征。所测量的电流-电压特性证明，通过适当选择电压脉冲模式，可以制造出具有欧姆或整流行为的纳米线。半导体纳米线对光敏感，其光谱灵敏度是 CdTe 的特征。在如此简单的方法中制备功能纳米结构的主要优点是增加了工艺重现性，并开辟了广阔的潜在光电应用领域。
