Department of National Defence, Centre for Operational Research and Analysis, 101 Colonel By Drive, Ottawa,Ontario K2A 0K1, Canada.
Opt Lett. 2010 Feb 15;35(4):529-31. doi: 10.1364/OL.35.000529.
A Schottky contact detector comprising a symmetric metal stripe buried in Si, capable of detecting surface plasmons at wavelengths below the bandgap of Si, is described. A model for the detector is proposed, and its performance is assessed at lambda(0)=1550 nm assuming a CoSi(2) stripe in p-type Si. End-fire coupled responsivities of about 0.1 A/W and minimum detectable powers of about -20 dBm are predicted at room temperature.
一种肖特基接触探测器，包含埋在 Si 中的对称金属条纹，能够探测低于 Si 带隙波长的表面等离子体，该探测器被描述。提出了探测器的模型，并假设在 p 型 Si 中存在 CoSi2 条纹，对其在 lambda(0)=1550nm 时的性能进行了评估。在室温下，预计其背向耦合响应率约为 0.1 A/W，最小可检测功率约为-20dBm。
