Istituto per la Microelettronica e Microsistemi (IMM), Consiglio Nazionale delle Ricerche (CNR), Via P. Castellino 111, 80131 Napoli, Italy.
Sensors (Basel). 2010;10(12):10571-600. doi: 10.3390/s101210571. Epub 2010 Nov 29.
Due to recent breakthroughs, silicon photonics is now the most active discipline within the field of integrated optics and, at the same time, a present reality with commercial products available on the market. Silicon photodiodes are excellent detectors at visible wavelengths, but the development of high-performance photodetectors on silicon CMOS platforms at wavelengths of interest for telecommunications has remained an imperative but unaccomplished task so far. In recent years, however, a number of near-infrared all-silicon photodetectors have been proposed and demonstrated for optical interconnect and power-monitoring applications. In this paper, a review of the state of the art is presented. Devices based on mid-bandgap absorption, surface-state absorption, internal photoemission absorption and two-photon absorption are reported, their working principles elucidated and their performance discussed and compared.
由于最近的突破，硅光子学现在是集成光学领域中最活跃的学科，同时也是一个具有商业产品市场的现实。硅光电二极管在可见光波长下是极好的探测器，但在硅 CMOS 平台上开发用于电信波长的高性能光电探测器一直是一个必要但尚未完成的任务。然而，近年来，已经提出并演示了许多近红外全硅光电探测器，用于光互连和功率监测应用。本文对该领域的最新进展进行了综述。报道了基于中带隙吸收、表面态吸收、内光发射吸收和双光子吸收的器件，阐述了它们的工作原理，并对它们的性能进行了讨论和比较。
