Akbari Ali, Tait R Niall, Berini Pierre
School of Information Technology and Engineering, University of Ottawa, 161 Louis Pasteur St., Ottawa, K1N 6N5, Canada.
Opt Express. 2010 Apr 12;18(8):8505-14. doi: 10.1364/OE.18.008505.
A surface plasmon polariton detector is demonstrated at infra-red wavelengths. The device consists of a metal stripe on silicon forming a Schottky contact thereon and supporting surface a plasmon polariton mode that is strongly confined and localised to the metal-semiconductor interface. Detection of optical radiation below the bandgap of silicon (at infrared wavelengths) occurs through internal photoemission. Responsivities of 0.38 and 1.04 mA/W were measured via end-fire coupling to a tapered optical fibre, at room temperature and at a wavelength of 1280 nm, for gold and aluminium stripes on n-type silicon, respectively. The device can be integrated with other structures used in nano-plasmonics, nano-photonics or silicon-based photonics, and it holds promise for short-reach optical interconnects and power monitoring applications.
一种表面等离子体激元探测器在红外波长下得到了演示。该器件由硅上的金属条带组成，在其上形成肖特基接触，并支持一种表面等离子体激元模式，该模式被强烈限制并局限于金属 - 半导体界面。硅带隙以下（红外波长）的光辐射检测通过内光电发射进行。在室温下，通过与锥形光纤的端射耦合，在波长为1280nm时，分别测量了n型硅上金和铝条带的响应度，分别为0.38和1.04 mA/W。该器件可以与纳米等离子体、纳米光子学或硅基光子学中使用的其他结构集成，并且有望用于短距离光互连和功率监测应用。
