Solid State Physics, Lund University, Box 118, S-221 00, Lund, Sweden.
Nano Lett. 2010 Mar 10;10(3):974-9. doi: 10.1021/nl903941b.
We demonstrate single nanowire tunnel diodes with room temperature peak current densities of up to 329 A/cm(2). Despite the large surface to volume ratio of the type-II InP-GaAs axial heterostructure nanowires, we measure peak to valley current ratios (PVCR) of up to 8.2 at room temperature and 27.6 at liquid helium temperature. These sub-100-nm-diameter structures are promising components for solar cells as well as electronic applications.
我们展示了室温下峰值电流密度高达 329 A/cm(2)的单根纳米线隧道二极管。尽管 II 型 InP-GaAs 轴向异质结构纳米线的比表面积较大，但我们在室温下测量到的峰值到谷值电流比 (PVCR) 高达 8.2，在液氦温度下高达 27.6。这些直径小于 100nm 的结构有望成为太阳能电池以及电子应用的理想组件。
