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单个轴向 InAs₁₋ₓPx 纳米线段的 X 射线衍射应变分析。

X-ray diffraction strain analysis of a single axial InAs 1-x Px nanowire segment.

作者信息

Keplinger Mario, Mandl Bernhard, Kriegner Dominik, Holý Václav, Samuelsson Lars, Bauer Günther, Deppert Knut, Stangl Julian

机构信息

Solid State and Semiconductor Physics, Johannes Kepler University Linz, A-4040 Linz, Austria.

Faculty of Mathematics and Physics, Charles University, Ke Karlovu 5, 121 16 Prague, Czech Republic.

出版信息

J Synchrotron Radiat. 2015 Jan;22(1):59-66. doi: 10.1107/S160057751402284X. Epub 2015 Jan 1.

DOI:10.1107/S160057751402284X
PMID:25537589
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC4294024/
Abstract

The spatial strain distribution in and around a single axial InAs 1-x Px hetero-segment in an InAs nanowire was analyzed using nano-focused X-ray diffraction. In connection with finite-element-method simulations a detailed quantitative picture of the nanowire's inhomogeneous strain state was achieved. This allows for a detailed understanding of how the variation of the nanowire's and hetero-segment's dimensions affect the strain in its core region and in the region close to the nanowire's side facets. Moreover, ensemble-averaging high-resolution diffraction experiments were used to determine statistical information on the distribution of wurtzite and zinc-blende crystal polytypes in the nanowires.

摘要

使用纳米聚焦X射线衍射分析了InAs纳米线中单个轴向InAs 1-x Px异质段及其周围的空间应变分布。结合有限元方法模拟,获得了纳米线非均匀应变状态的详细定量图像。这有助于详细了解纳米线和异质段尺寸的变化如何影响其核心区域以及纳米线侧面附近区域的应变。此外,还利用系综平均高分辨率衍射实验来确定纳米线中纤锌矿和闪锌矿晶体多型分布的统计信息。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/070d/4294024/e7eaaf9dbd94/s-22-00059-fig7.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/070d/4294024/be3bf6ee733d/s-22-00059-fig1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/070d/4294024/d0f9cfad7773/s-22-00059-fig2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/070d/4294024/66d1cbbbf38a/s-22-00059-fig3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/070d/4294024/347d4a2f96e0/s-22-00059-fig4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/070d/4294024/087b6c8ffe9b/s-22-00059-fig5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/070d/4294024/4f2eeb769fb7/s-22-00059-fig6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/070d/4294024/e7eaaf9dbd94/s-22-00059-fig7.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/070d/4294024/be3bf6ee733d/s-22-00059-fig1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/070d/4294024/d0f9cfad7773/s-22-00059-fig2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/070d/4294024/66d1cbbbf38a/s-22-00059-fig3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/070d/4294024/347d4a2f96e0/s-22-00059-fig4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/070d/4294024/087b6c8ffe9b/s-22-00059-fig5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/070d/4294024/4f2eeb769fb7/s-22-00059-fig6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/070d/4294024/e7eaaf9dbd94/s-22-00059-fig7.jpg

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Phys Rev Lett. 2013 Nov 22;111(21):215502. doi: 10.1103/PhysRevLett.111.215502. Epub 2013 Nov 19.
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Tuning the electro-optical properties of germanium nanowires by tensile strain.通过拉伸应变来调整锗纳米线的光电性质。
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Electrostatic spin control in InAs/InP nanowire quantum dots.在 InAs/InP 纳米线量子点中实现静电自旋控制。
Nano Lett. 2012 Sep 12;12(9):4490-4. doi: 10.1021/nl301497j. Epub 2012 Aug 6.
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Bright single-photon sources in bottom-up tailored nanowires.自下而上定制纳米线中的亮单光子源。
Nat Commun. 2012 Mar 13;3:737. doi: 10.1038/ncomms1746.
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Tunnel field-effect transistors based on InP-GaAs heterostructure nanowires.基于 InP-GaAs 异质结构纳米线的隧道场效应晶体管。
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Unit cell parameters of wurtzite InP nanowires determined by x-ray diffraction.纤锌矿结构 InP 纳米线的晶胞参数由 X 射线衍射确定。
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X-ray nanodiffraction on a single SiGe quantum dot inside a functioning field-effect transistor.在工作状态的场效应晶体管内的单个硅锗量子点的 X 射线纳米衍射。
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