Chen Yungting, Cheng Tzuhuan, Cheng Chungliang, Wang Chunhsiung, Chen Chihwei, Wei Chihming, Chen Yangfang
Department of Physics, National Taiwan University, Taipei 106, Taiwan.
Opt Express. 2010 Jan 4;18(1):56-62. doi: 10.1364/OE.18.000056.
A new approach for developing highly sensitive MOS photodetector based on the assistance of anodic aluminum oxide (AAO) membrane is proposed, fabricated, and characterized. It enables the photodetector with the tunability of not only the intensity but also the range of the response. Under a forward bias, the response of the MOS photodetector with AAO membrane covers the visible as well as infrared spectrum; however, under a reverse bias, the near-infrared light around Si band edge dominates the photoresponse. Unlike general MOS photodetectors which only work under a reverse bias, our MOS photodetectors can work even under a forward bias, and the responsivity at the optical communication wavelength of 850nm can reach up to 0.24 A/W with an external quantum efficiency (EQE) of 35%. Moreover, the response shows a large enhancement factor of 10 times at 1050 nm under a reverse bias of 0.5V comparing with the device without AAO membrane. The underlying mechanism for the novel properties of the newly designed device has been proposed.
提出、制造并表征了一种基于阳极氧化铝（AAO）膜辅助开发高灵敏度MOS光电探测器的新方法。它使光电探测器不仅在强度上而且在响应范围上具有可调性。在正向偏压下，带有AAO膜的MOS光电探测器的响应覆盖可见光以及红外光谱；然而，在反向偏压下，硅带边缘附近的近红外光主导光响应。与仅在反向偏压下工作的普通MOS光电探测器不同，我们的MOS光电探测器即使在正向偏压下也能工作，并且在850nm光通信波长处的响应度可达0.24 A/W，外部量子效率（EQE）为35%。此外，与没有AAO膜的器件相比，在0.5V反向偏压下，该响应在1050nm处显示出10倍的大幅增强因子。已经提出了新设计器件这些新特性的潜在机制。
