Su Shaojian, Cheng Buwen, Xue Chunlai, Wang Wei, Cao Quan, Xue Haiyun, Hu Weixuan, Zhang Guangze, Zuo Yuhua, Wang Qiming
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China.
Opt Express. 2011 Mar 28;19(7):6400-5. doi: 10.1364/OE.19.006400.
Using a 820 nm-thick high-quality Ge0.97Sn0.03 alloy film grown on Si(001) by molecular beam epitaxy, GeSn p-i-n photodectectors have been fabricated. The detectors have relatively high responsivities, such as 0.52 A/W, 0.23 A/W, and 0.12 A/W at 1310 nm, 1540 nm, and 1640 nm, respectively, under a 1 V reverse bias. With a broad detection spectrum (800-1800 nm) covering the whole telecommunication windows and compatibility with conventional complementary metal-oxide-semiconductors (CMOS) technology, the GeSn devices are attractive for applications in both optical communications and optical interconnects.
利用通过分子束外延生长在Si(001)上的820纳米厚的高质量Ge0.97Sn0.03合金薄膜，制造了GeSn p-i-n光电探测器。在1 V反向偏压下，这些探测器分别在1310 nm、1540 nm和1640 nm处具有相对较高的响应度，例如0.52 A/W、0.23 A/W和0.12 A/W。由于具有覆盖整个电信窗口的宽检测光谱（800 - 1800 nm）以及与传统互补金属氧化物半导体（CMOS）技术的兼容性，GeSn器件在光通信和光互连应用中具有吸引力。
