Zheng Xuezhe, Liu Frankie, Patil Dinesh, Thacker Hiren, Luo Ying, Pinguet Thierry, Mekis Attila, Yao Jin, Li Guoliang, Shi Jing, Raj Kannan, Lexau Jon, Alon Elad, Ho Ron, Cunningham John E, Krishnamoorthy Ashok V
Sun Microsystems Physical Sciences Center, San Diego, CA 92121, USA.
Opt Express. 2010 Jan 4;18(1):204-11. doi: 10.1364/OE.18.000204.
We report ultra-low-power (690fJ/bit) operation of an optical receiver consisting of a germanium-silicon waveguide detector intimately integrated with a receiver circuit and embedded in a clocked digital receiver. We show a wall-plug power efficiency of 690microW/Gbps for the photonic receiver made of a 130nm SOI CMOS Ge waveguide detector integrated to a 90nm Si CMOS receiver circuit. The hybrid CMOS photonic receiver achieved a sensitivity of -18.9dBm at 5Gbps for BER of 10(-12). Enabled by a unique low-overhead bias refresh scheme, the receiver operates without the need for DC balanced transmission. Small signal measurements of the CMOS Ge waveguide detector showed a 3dB bandwidth of 10GHz at 1V of reverse bias, indicating that further increases in transmission rate and reductions of energy-per-bit will be possible.
我们报告了一种光接收器的超低功耗（690飞焦/比特）运行情况，该光接收器由与接收器电路紧密集成并嵌入时钟数字接收器的锗硅波导探测器组成。我们展示了由集成到90nm Si CMOS接收器电路的130nm SOI CMOS Ge波导探测器制成的光子接收器的690微瓦/吉比特的壁插式功率效率。该混合CMOS光子接收器在5Gbps时实现了-18.9dBm的灵敏度，误码率为10（-12）。通过独特的低开销偏置刷新方案，该接收器无需直流平衡传输即可运行。CMOS Ge波导探测器的小信号测量显示，在1V反向偏置下，3dB带宽为10GHz，这表明传输速率有望进一步提高，每比特能量有望进一步降低。
