Mo/Si多层光学元件在强脉冲极紫外辐射下的单次损伤机制

Single shot damage mechanism of Mo/Si multilayer optics under intense pulsed XUV-exposure.

作者信息

Khorsand A R, Sobierajski R, Louis E, Bruijn S, van Hattum E D, van de Kruijs R W E, Jurek M, Klinger D, Pelka J B, Juha L, Burian T, Chalupsky J, Cihelka J, Hajkova V, Vysin L, Jastrow U, Stojanovic N, Toleikis S, Wabnitz H, Tiedtke K, Sokolowski-Tinten K, Shymanovich U, Krzywinski J, Hau-Riege S, London R, Gleeson A, Gullikson E M, Bijkerk F

机构信息

FOM-Institute for Plasma Physics Rijnhuizen, Edisonbaan 14, Nieuwegein, The Netherlands.

出版信息

Opt Express. 2010 Jan 18;18(2):700-12. doi: 10.1364/OE.18.000700.

DOI:10.1364/OE.18.000700

PMID:20173890

Abstract

We investigated single shot damage of Mo/Si multilayer coatings exposed to the intense fs XUV radiation at the Free-electron LASer facility in Hamburg - FLASH. The interaction process was studied in situ by XUV reflectometry, time resolved optical microscopy, and "post-mortem" by interference-polarizing optical microscopy (with Nomarski contrast), atomic force microscopy, and scanning transmission electron microcopy. An ultrafast molybdenum silicide formation due to enhanced atomic diffusion in melted silicon has been determined to be the key process in the damage mechanism. The influence of the energy diffusion on the damage process was estimated. The results are of significance for the design of multilayer optics for a new generation of pulsed (from atto- to nanosecond) XUV sources.

摘要

我们研究了在汉堡的自由电子激光装置——FLASH中，Mo/Si多层涂层在强飞秒极紫外（XUV）辐射下的单次损伤情况。通过XUV反射测量法、时间分辨光学显微镜进行原位研究，并通过干涉偏振光学显微镜（带有诺马斯基衬度）、原子力显微镜和扫描透射电子显微镜进行“事后分析”。已确定由于熔化硅中原子扩散增强而导致的超快硅化钼形成是损伤机制中的关键过程。估算了能量扩散对损伤过程的影响。这些结果对于新一代脉冲（从阿秒到纳秒）XUV源的多层光学器件设计具有重要意义。